通过电子溢出效应改善聚硫化物的转换动力学,与V/Co双原子位点在N-doped MXene上

Ronghui Liu1,2, Chao Feng3, Pengfei Wu1

  • 1Zhejiang Key Laboratory of Data-Driven High-Safety Energy Materials and Applications, Advanced Interdisciplinary Science Research Center, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China.

概括

在N-化MXene中的-二原子位点可以提高室温-硫电池的性能. 这项创新提高了反应动力学和稳定性,实现了先进的能量存储的高容量和长周期寿命.