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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Yu Dong1,2, Shiyu Feng1,2, Weiguo Huang1,2
1State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China. whuang@fjirsm.ac.cn.
刺激响应材料 (SRM) 现在可以执行复杂的逻辑操作,以实现先进的数据安全. 这一突破使实体资产的新型加密和防伪硬件成为可能.
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