皮埃尔斯式扭曲对无形相变装置中的传输的影响
Nils Holle1, Sebastian Walfort1, Riccardo Mazzarello2
1University of Münster, Institute of Materials Physics, Münster, Germany.
概括
阶段变化材料 (PCM) 显示了神经形态计算的前景. 这项研究将无形PCM中的电阻漂移与结构变化和局部电流密度联系起来,从而进一步了解这些设备.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算材料科学科学 计算材料科学
背景情况:
- 阶段变化材料 (PCM) 正在从非易失性记忆向神经形态计算过渡.
- 了解PCM无形阶段的电子传输和电阻漂移至关重要,但不完整.
- 假设阻力漂移源于物理衰老和在玻璃状状态中演变的Peierls-like扭曲.
研究的目的:
- 提供直接证据,将皮尔尔斯类扭曲与纳米级相变装置中的局部电流密度联系起来.
- 阐明原子结构进化在电阻漂移现象中的作用.
- 调查纳米封闭对PCM属性和电子运输的影响.
主要方法:
- 密度函数理论 (DFT) 的计算.
- 非平衡的格林函数 (NEGF) 模拟.
- 原子层次的模拟包括限制物质接口.
主要成果:
- 在纳米级PCM中建立了与Peierls-like扭曲和局部电流密度之间的直接相关性.
- 电子运输是由接近费米水平的状态在较少扭曲的原子区域中促进的.
- 纳米封闭对原子结构,电子结构和运输的影响很大,需要在模拟中包含接口.
结论:
- 由局部电流密度驱动的Peierls-like扭曲的演变是无形PCM中电阻漂移的关键来源.
- 原子化接口设计对于优化纳米尺度相变装置的性能至关重要.
- 这些发现为改善PCM用于神经形态应用的设计铺平了道路.
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