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高性能纳米线可重新配置的场效晶体管使用闪光灯化

Sayantan Ghosh^1,2, Muhammad Bilal Khan¹, Slawomir Prucnal¹

¹Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany.

ACS applied electronic materials

|March 31, 2025

概括

可扩展的纳米线可重新配置的场效应晶体管 (RFET) 通过控制的化物形成实现高性能. 这些设备具有出色的开关比和对称电流,有望实现节能集成电路.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

可重新配置的场效应晶体管 (RFET) 的自上而下的制造对于大规模集成至关重要.
基于 (Si) 纳米线的RFET需要受控的化,高开关比率和对称电流以获得卓越的性能.

研究的目的:

以展示基于Si纳米线的可扩展RFET设备的电性能.
通过网关方案和介电材料优化晶体管的电子特性.
探索电荷载体能量频段上的门电容控制.

主要方法:

可扩展Si纳米线RFET的制造.
毫秒范围的闪光灯火 (FLA) 用于控制的化物形成.
调门方案和介电材料 (例如,SiO2) 用于纳米线被动化.

主要成果:

在顶级设备中,在可以忽略的歇斯底里的情况下,实现了增强的双极行为.
证明了低次值波动 (210mV/dec) 和高开关比率 (高达~10^8).
获得了优异的电子和孔对称性,记录了1.03.3的pN直流对称性.

结论:

可实现高性能,可扩展的RFET,可控制化物长度和优化门方案.
这些设备具有卓越的电气特性,包括高开关比率和对称电流.
开发的RFET具有显著的潜力,可以减少节能集成电路的延迟和功耗.

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