多晶MoS2作为Ru互连中的扩散屏障的作用:热稳定性和电性能
Dun-Jie Jhan1, Kai-Yuan Hsiao1, Ranjini Sarkar2
1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.
ACS applied materials & interfaces
|March 31, 2025
概括
多晶二硫化物 (MoS2) 显示出作为 (Ru) 相互连接的扩散屏障的希望. 虽然它可以在较低的温度下阻止扩散,但MoS2中的缺陷略有降低了它的有效性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体设备物理 半导体设备物理
- 纳米技术 纳米技术
背景情况:
- (Ru) 互连在先进的半导体设备中至关重要.
- 需要有效的扩散屏障来防止相互扩散,并确保设备的可靠性.
- 二硫化物 (MoS2) 正在作为一种潜在的扩散屏障材料进行探索.
研究的目的:
- 为了研究多晶MoS2作为Ru互连的扩散屏障的有效性.
- 了解Ru/MoS2/Si接口上的扩散机制和相变.
- 评估MoS2中缺陷对其扩散屏障性能的影响.
主要方法:
- 在现场传输电子显微镜 (TEM) 用于实时观察扩散.
- 通过TEM衍射和成像来分析相互扩散和相位形成.
- 密度函数理论 (DFT) 计算以模拟MoS2中的扩散.
- 电性能测量 (电阻) 和粘合强度测试.
主要成果:
- 多晶MoS2在中等温度下有效抑制Ru和Si之间的互扩散.
- 在高温下,Si扩散通过MoS发生,导致RuSi3形成.
- 缺陷的MoS2 (用等离子体处理) 显示出稍低的扩散阻断温度 (~700°C) 由于粘合性得到改善.
结论:
- 多晶MoS2,即使有缺陷,也显示出作为Ru互连的扩散屏障的巨大潜力.
- 了解缺陷行为是优化MoS2用于半导体应用的关键.
- 该研究提供了对下一代互连技术至关重要的物质相互作用的见解.
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