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Updated: May 16, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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在碳纳米管场效应晶体管中通过金属子纳米集群吸收局部电荷兴奋剂

Weili Li1, Yifan Liu2, Xiaoxiao Guan3

  • 1Institute of Fundamental and Frontier Sciences, Key Laboratory for Quantum Physics and Photonic Quantum Information of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.

Nano letters
|March 31, 2025
PubMed
概括

金属子纳米集群有效地使半导体碳纳米管 (CNT) 成为先进的场效应晶体管 (FET). (Pd) 能够实现p型兴奋剂,而 (Sc) 和 (Y) 可以促进n型兴奋剂,从而提高设备的性能.

关键词:
高性能场效晶体管高性能场效晶体管金属子纳米集群吸收吸收.极性控制的局部化兴奋剂.一个半导体碳纳米管.没有额外的阻力.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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