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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

248
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
248

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支持多模式的光子延迟线:突破延迟密度极限

Shihan Hong1, Long Zhang1, Jiachen Wu1

  • 1State Key Laboratory for Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China.

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此摘要是机器生成的。

研究人员使用多模波导开发了一种新的光子延迟线. 这一突破在一个紧的足迹中实现了前所未有的延迟密度和范围,推进了光通信和量子技术.

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科学领域:

  • 光子学是指光子学的使用方法.
  • 集成光学 集成光学 集成光学
  • 波导技术技术 波导技术

背景情况:

  • 集成的光学延迟线对于微波束成型,光学通信和量子光子学至关重要.
  • 现有的单模波导设计在同时实现大延迟范围,小足迹和宽带宽方面面临限制,原因是传播损失和组折射率权衡.
  • 对于紧,高性能延迟线的需求日益增长,以支持先进的应用.

研究的目的:

  • 提出并实验证明一条新型的多模式光子延迟线.
  • 为了克服传统单模波导螺旋的延迟密度限制.
  • 为了实现宽带运行,毫米2尺寸的足迹和超大时间延迟能力.

主要方法:

  • 引入了一种新型的多模式延迟单元,集成模式 (de) 复杂器.
  • 使用超低损耗的多模波导螺旋,支持TE0,TE1和TE2模式的并行传播.
  • 对不同的极化和模式进行低损耗传播的实验演示.

主要成果:

  • 测量的传播损失为0.2dB/cm (TE0),0.31dB/cm (TE1) 和0.49dB/cm (TE2). 测量中的传播损失为0.2dB/cm (TE1),0.31dB/cm (TE1) 和0.49dB/cm (TE2).
  • 实现了 376.9 ps/cm 的线路延迟密度和 0.004 dB/ps 的低延迟损失.
  • 演示了一条7位调节式多模光子延迟线,延迟范围为12.7 ns,分辨率为100 ps,占地面积为3.85 mm2,延迟密度超过3299 ps/mm2.2.

结论:

  • 拟议的多模光子延迟线为芯片上设备提供了迄今为止最大的延迟范围和最高的延迟密度.
  • 这项技术突破了单模波导螺旋的延迟密度极限.
  • 证明的性能可以在宽带,紧型和超大时延应用中取得重大进展.