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Updated: May 16, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

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基于平带的高温铁磁半导体状态在石墨C4N3单层中

Chaoyu He1, Yujie Liao1, Tao Ouyang1

  • 1Laboratory for Quantum Engineering and Micro-Nano Energy Technology and School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.

Fundamental research
|April 1, 2025
PubMed
概括

一个具有单孔缺陷的新型格子模型使得高温铁磁半导体的隔离平带成为可能. 单层C4N3表现出罕见的内在铁磁性和多铁性质,这对于自旋电子学至关重要.

关键词:
铁磁半导体 铁磁半导体第一个原则计算计算.图形C4N3图形C4N3图形C4N3图形C4N3图形隔离的平带带隔离.紧紧结合的模型两个维的多铁体.

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