对用于5G通信应用的GaN射频设备和功率放大器进行审查
Hao Lu1, Meng Zhang1, Ling Yang1
1School of Microelectronics, Xidian University, Xi'an 710071, China.
Fundamental research
|April 1, 2025
概括
化 (GaN) 设备对于5G功率放大器至关重要,因为它们具有卓越的性能. 本综述涵盖了高级的GaN-on-Si HEMT,用于高频,高线性和具有成本效益的5G应用.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 电信 电信服务 电信服务 电信服务
背景情况:
- 5G和超越5G (B5G) 时代需要用于发射器的高性能功率放大器 (PA).
- 加化 (GaN) 设备提供优越的性能,使它们成为先进的PA应用的理想选择.
- 数据流量的增加和5G的部署需要高频,高线性和具有成本效益的PA解决方案.
研究的目的:
- 提供关于射频 (RF) GaN设备技术的研究和开发的全面审查.
- 为5G通信系统提供GaN设备进步的未来观点.
- 为了指导GaN高电子移动性晶体管 (HEMT) 在5G中的应用.
主要方法:
- 在先进的GaN设备技术中审查关键问题.
- 专注于高电子移动性晶体管 (HEMT) 的GaN-on-Silicon (GaN-on-Si) 产品.
- 包括电路技术,紧的建模和成本效益方面的考虑.
主要成果:
- 由于其固有的优势,GaN设备被确定为5G PAs的领先者.
- 研究强调了高频率和高线性GaN-on-Si HEMT的进展.
- 紧的建模和具有成本效益的制造是关键的研究领域.
结论:
- 为了满足5G功率放大器的严格要求,GaN HEMT是必不可少的.
- 对GaN设备和电路技术的持续研究将推动5G性能.
- 这项工作是利用GaN HEMT在5G应用中的宝贵资源.
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