低频噪声光谱用于在HfO2铁电FET中导航几何变化的应变效应
Ryun-Han Koo1, Wonjun Shin2,3, Sangwoo Kim4
1Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|April 2, 2025
概括
在氧化铁电场效应晶体管 (FeFET) 中的应变工程可以增强铁电,但可能会损坏接口. 这项研究揭示了由于应变引起的接口损伤导致的噪声特征的独特反向缩放效应.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 设备工程 设备工程
背景情况:
- 应变工程对于调整氧化 (HfO2) 薄膜中的铁电特性至关重要.
- 将应变诱导的铁电整合到场效应晶体管 (FET) 中需要了解几何因素和接口.
研究的目的:
- 研究应变对具有多Si通道的基于HfO2的铁电FET (FeFET) 的影响.
- 用低频噪声 (LFN) 光谱分析应变对通道接口和设备性能的影响.
主要方法:
- 利用低频噪声 (LFN) 光谱来探测聚SiFeFET中的应变效应.
- 分析了金属后炼过程中应变对通道接口质量和设备几何学的影响.
主要成果:
- 应变引入通道接口损伤,严重程度取决于设备几何形状.
- 观察到"反向缩放效应",噪声随频道长度增加而增加,与传统的FET相反.
- 增加的应变增强了铁电性,但由于接口损坏而降低了电性能.
结论:
- 应变工程极大地影响了FeFET的性能和可靠性.
- 为优化应变效应提供了指导方针,以在未来的FeFET设计中平衡铁电和设备完整性.
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