相关实验视频

Updated: May 16, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

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基于晶体管的无电容 DRAM 设计,以通道-场效应-传感器为基础,全包围形

Seung Ji Bae1, Sang Ho Lee1, Jin Park1

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea.

Discover nano
|April 2, 2025
PubMed
概括

这项研究引入了一种新型的单晶体管动态随机存取内存 (1T-DRAM),使用一个全门通道场效应晶体管 (GAA ARCH-TFET). 这种先进的DRAM设计为高密度内存应用提供了卓越的性能和低能耗.

关键词:
乐队到乐队的乐队.没有电容的动态随机访问存储器.门 - - 围绕着所有的门.异构结构 异构结构这里是SIGE SIGE.一个道的场效应晶体管.道道是为了道.

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