用于高性能灵活薄膜晶体管的相组合INO半导体
Quang Khanh Nguyen1, Giang Hoang Pham1, Thi Thu Huong Chu2
1Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea.
ACS applied materials & interfaces
|April 3, 2025
概括
我们使用原子层沉积开发了无形/纳米晶体复合氧化薄膜,用于先进的薄膜晶体管 (TFT). 这些薄膜显示了增强的电子流动性和稳定性,克服了氧化TFT的关键局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 半导体物理 半导体物理
背景情况:
- 氧化 (InO) 是薄膜晶体管 (TFT) 的一个有前途的材料,因为它具有很高的电子流动性和光学透明度.
- 然而,它的应用受到高载体度,不良的结晶控制和不稳定性所阻碍.
- 开发先进的制造方法对于克服这些局限性至关重要.
研究的目的:
- 使用高压原子层沉积 (ALD) 制造无形/纳米晶相复合氧化 (InO) 薄膜.
- 为了研究沉积温度和通道厚度对薄膜特性和设备性能的影响.
- 为了解决下一代TFT的载体度,相控和机械耐用性的局限性.
主要方法:
- 通过使用InCA-1前体和H2O2氧化剂的高压原子层沉积 (ALD) 制造InO薄膜.
- 系统地改变沉积温度和通道厚度,以控制薄膜结构和载体度.
- 薄膜的特性,包括电性能,光学传导率,表面形态,机械灵活性和环境稳定性.
主要成果:
- 通过共振杂化实现无形/纳米晶相复合物InO薄膜,可控制载体度和增强电子传输.
- 经过优化 (110°C,厚度为7.0纳米) 的薄膜显示出高场效移动性 (61.1 cm2 V-1 s-1),开/关比 (0.9 × 10^6),低下值摆动 (0.45 V dec-1).
- 展现出出色的可复制性,光学传导率 (>87%),机械灵活性 (1万个曲周期) 和环境稳定性 (60天).
结论:
- 开发的相组合 InO 片克服了传统 InO 基 TFT 的关键局限性.
- ALD可以精确控制相位组成,载体度和薄膜厚度.
- 这些发现为先进,耐用和高性能电子和光电子设备铺平了道路.
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