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Updated: May 16, 2025

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通过高k介电范德瓦尔斯封装来进行CMOS兼容的二维半导体 CFET 制造

Yujia Yan1,2, Tao Yan3, Feng Wang2,4

  • 1Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, P. R. China.

Nano letters
|April 3, 2025
PubMed
概括

我们开发了一种使用高k介电材料的范德瓦尔斯封装方法,以将2D半导体与集成. 这一策略可以为未来的电子产品制造先进的二维互补场效应晶体管 (CFET).

关键词:
两维材料是二维材料.3D整合 3D整合转移高k介电介电范德瓦尔斯封装的封装方式垂直的CMOS是指一个垂直的CMOS.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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