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Updated: May 16, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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2D In2Ge2Te6晶体用于高性能p通道晶体管

Tong Zhao1, Shiying Guo1, Xiufeng Song1

  • 1MIIT Key Laboratory of Advanced Display Materials and Devices, Jiangsu Engineering Research Center for Quantum Dot Display, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

Nano letters
|April 3, 2025
PubMed
概括

研究人员发现了高质量的 telluride (In2Ge2Te6) 单晶,这是一个有前途的p型二维半导体. 这种材料使下一代电子产品的高性能晶体管成为可能,解决了二维半导体研究中的一个关键缺口.

关键词:
这是一个二维半导体半导体.在In2Ge2Te6中.乐队结构 乐队结构化学蒸汽运输 化学蒸汽运输场效应晶体管的领域效应晶体管.在p型的p型车上.

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