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Updated: May 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Published on: November 24, 2016

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高效的22nm GNRFET PTLA使用低功耗三模技术用于高速处理器.

Sneha Arora1, Suman Lata Tripathi2, Inung Wijayanto3

  • 1School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, India.

Scientific reports
|April 3, 2025
PubMed
概括

这项研究介绍了一种使用石墨烯纳米丝带场效应晶体管 (GNRFETs) 的新型低功耗通路晶体管逻辑添加器 (PTLA). 该设计显著降低了功耗,并提高了人工智能和边缘计算应用的性能.

关键词:
石墨烯纳米带 FET 带混合式全添加器 (HFA) 是一种混合式全添加器.通过晶体管逻辑.功率延迟产品的功率延迟产品是什么这就是Synopsys HSPICE.三模技术是三模技术.

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Field Effect Transistor01:29

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