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Updated: May 15, 2025

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晶圆尺度MoS2的低碳残留增长

Yihe Liu1,2, He Jiang1,2, Li Gao1,2

  • 1Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)
|April 7, 2025
PubMed
概括

一个新的聚烯酸 (PAA) 辅助的策略使得二硫化 (MoS2) 晶圆的无碳合成成为可能. 这种方法克服了净化二维材料的挑战,产生了用于电子应用的高质量薄膜.

关键词:
在MoS2的基础上,MoS2低碳残留物的低碳残留物有机媒介增长是有机媒介的增长.聚烯酸是一种多烯酸.晶圆尺度上的晶圆尺度.

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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