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Updated: May 15, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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收缩:异原子 (Si,B,N和P) 合的2D单层MoS2用于NH3气体检测

Terkumbur E Gber1,2, Hitler Louis1,3, Aniekan E Owen1,3

  • 1Computational and Bio-Simulation Research Group, University of Calabar Calabar Nigeria louismuzong@gmail.com.

RSC advances
|April 7, 2025
PubMed
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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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