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Updated: May 15, 2025

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应变辅助大规模1T-MoS2合成及其光学突触闪存应用程序

Hyelim Shin1, Gunhoo Woo2, Jinill Cho3

  • 1Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.

Small methods
|April 8, 2025
PubMed
概括

研究人员开发了一种新方法,用于为先进的电子设备制造1T相二硫化物 (MoS2). 这个阶段为闪存和光电子应用提供了增强的性能.

关键词:
一个T-MoS2在ICP-CVD中使用ICP-CVD.闪存记忆 闪存记忆是一种闪存记忆.漂浮门是漂浮的门.非易失性存储器 (non-volatile memory) 是一种非易失性存储器.血合成的方法突触突触突触是一个突触突触.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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