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Updated: May 15, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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原子薄的2H-MoTe2的合成和电子结构

Wenjuan Zhao1,2,3, Xieyu Zhou4, Dayu Yan1,2

  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. Wenjuan.Zhao@trieste.ism.cnr.it.

Nanoscale
|April 9, 2025
PubMed
概括

研究人员利用角度分辨光发射光谱学和DFT探索了二维二甲 (2H-MoTe2) 的电子结构. 单层MoTe2是一种半导体,具有直接的K点间隙,对于纳米级设备至关重要.

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