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在芯片上的活跃非互惠拓光子学
Ridong Jia1,2, Thomas Caiwei Tan1,2, Sobhan Subhra Mishra1,2
1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
Advanced materials (Deerfield Beach, Fla.)
|April 10, 2025
概括
研究人员使用印第安胺 (InSb) 开发了一种新的非互惠拓芯片. 这一突破为先进技术提供了紧,高效的光子设备,具有高度隔离性.
科学领域:
- 综合光子学 综合光子学
- 拓学光子学 拓学光子学
- 材料科学 材料科学 材料科学
背景情况:
- 芯片规模的非互惠性对于光子循环器和隔离器在数据通信,信号调制和量子计算中至关重要.
- 现有的芯片在实现小足迹,高隔离,低损失和积极控制非互惠方面面临挑战.
研究的目的:
- 报告一个非互惠的拓芯片,使用磁光印第安胺 (InSb) 集成到一个山谷大厅系统中.
- 通过实现山谷保留的非互惠模式来展示超紧和高效的非互惠光子设备.
主要方法:
- 集成磁光印反化物 (InSb) 与谷霍尔系统.
- 打破时间逆转和空间逆转的对称性,以实现谷保留的非互惠模式.
- 为设备优化微调拓腔的关键合点.
主要成果:
- 实验实现了64.3dB的最大隔离比和2.6dB的低芯片损失.
- 对非互惠拓芯片的小足迹 (6.4 × 2.5λ2) 的证明.
- 通过全光学方法从0到48dB的隔离比的活性调制.
结论:
- 与传统设备相比,开发的非互惠拓芯片提供了更高的性能.
- 这一进步对于集成光子学至关重要,使下一代通信系统,LiDAR,太赫兹技术,量子计算和密码学成为可能.
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