基于memristor的超混沌系统的设计和特征分析
Zhixia Ding1, Mengyan Li1, Liheng Wang1
1School of Electrical and Information Engineering, Wuhan Institute of Technology, Wuhan 430205, China.
Chaos (Woodbury, N.Y.)
|April 10, 2025
概括
这项研究引入了一种新的分数离散记忆器模型,增强记忆器的特性,并使新的超混沌系统成为可能. 该系统具有可调整的复杂性和多稳定性,通过电路模拟进行验证.
科学领域:
- 非线性动力学是一种非线性动力学.
- 混沌理论 混沌理论
- 记忆器应用程序 应用程序
背景情况:
- 离散的记忆混乱系统具有不连续的轨迹.
- 理想的整数顺序的memristor模型对实际设备缺乏准确性.
研究的目的:
- 介绍一个格伦瓦尔德-列特尼科夫类型的二次三变量分数离散记忆器模型.
- 增强memristors的非线性和内存特性.
- 构建一个新的四维分数离散记忆的混乱系统.
主要方法:
- 开发了一个分数离散的memristor模型.
- 结合非均,不相称的顺序memristors创建一个超混沌的系统.
- 分析动力学使用吸引力相图,分叉图,利亚普诺夫指数和变.
主要成果:
- 拟议的系统表现出更大的超混沌区域和更高的复杂性.
- 观察到丰富的多稳定行为,包括共存的吸引力和增强的偏移.
- 证明了不相称顺序参数用于控制混乱状态的调整性.
结论:
- 分数离散记忆器模型准确地反映了实际设备的特性.
- 新的超混沌系统提供了先进的结构和灵活的内存效果优化.
- 电路模拟验证了系统的数值发现.
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