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Updated: May 15, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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兰道尔电阻双极在一维缺陷通过近场光电流纳米显微镜揭示

Francesca Falorsi1, Marco Dembecki2, Christian Eckel1

  • 1First Institute of Physics, Faculty of Physics, Georg-August-University Göttingen, Göttingen 37077, Germany.

Nano letters
|April 10, 2025
PubMed
概括

研究人员使用光电流纳米学观察在石墨烯接口上的兰道尔电阻二极体 (LRD). 这种技术非侵入性地检测了电荷载体积累,为纳米电阻提供了新的见解.

关键词:
石墨烯异构结构是石墨烯的异构结构.兰道尔电阻双极是兰道尔电阻的双极.纳米镜电阻性 纳米镜电阻性摄影电流成像成像技术s-SNOM 这个名字.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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