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在α-In₂Se₃侧面场效应晶体管中进行电阻切换

Ting-Ching Chu¹, Hyeonseon Choi², Christopher E Mead²

¹Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208, United States.

|April 11, 2025

概括

铁电半导体场效应晶体管 (FeS-FET) 中的电阻切换受极化切换和缺陷的影响. 了解这些机制是改进用于内存应用的FeS-FET的关键.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

由于非挥发性电阻切换,二维铁电半导体场效应晶体管 (FeS-FETs) 对高级内存和神经形态计算充满希望.
在α-In₂Se₃侧面设备中阻力开关背后的精确机制,特别是通道和接触电阻的作用,尚未完全理解.

研究的目的:

为了在空间上解决在FeS-FETs的α-In₂Se₃中取决于网关聚合的接触和通道电阻.
研究自发偏振和缺陷形成对电阻开关特性的影响.
阐明了用于提高FeS-FET性能的电阻切换的机制.

主要方法:

凯尔文探针力显微镜 (KPFM) 来映射接触和通道电阻.
扫描光电流显微镜 (SPCM) 用于量化Schottky屏障高度变化.
现场高角度环状暗场扫描传输电子显微镜 (HAADF-STEM) 用于观察结构缺陷.

主要成果:

接触电阻和通道电阻都随着正抛光而增加,随着负抛光而减少,与肖特基屏障高度调制相关.
已证实自发偏振会影响多域片中的通道和接触电阻.
即使没有明确的铁电极化开关,也观察到顺时针的电阻开关,通常伴随着由门抛光引起的堆叠缺陷.

结论:

在α-In₂Se₃侧面装置中的电阻切换是一种复杂的现象,受到可逆偏振切换和不可逆转缺陷形成的影响.
堆叠缺陷的形成可以阻碍域壁的运动,解释了缺乏突然切换值的原因.
改进的域壁控制和缺陷缓解策略对于提高FeS-FET在内存应用中的性能和可靠性至关重要.

关键词:

铁电半导体铁电半导体场效应晶体管的领域效应晶体管.印度化的化.凯尔文探测器强力显微镜电阻开关电阻开关扫描光电显微镜扫描光电显微镜扫描传输电子显微镜扫描传输电子显微镜

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