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相关概念视频

MOS Capacitor01:25

MOS Capacitor

631
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
631
MOSFET01:16

MOSFET

390
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
390
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

3.8K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
3.8K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

248
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
248
Characteristics of MOSFET01:17

Characteristics of MOSFET

301
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
301
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

630
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
630

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相关实验视频

Updated: May 15, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

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全合一的压缩和加密引擎基于灵活的聚胺记忆器.

Rui Wang1, Saisai Wang2, Yuhan Xin2

  • 1Key Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China.

Small science
|April 11, 2025
PubMed
概括

本研究介绍了一种使用聚胺记忆器的新型单芯片引擎,用于高效的数据压缩和强大的加密,这对于物联网 (IoT) 安全至关重要. 该设备将压缩传感与随机电压扩散集成在一起,以增强数据保护.

关键词:
压缩感应传感器 压缩感应压缩和加密的使用.灵活的电子产品灵活的电子产品挥发性的记忆器.

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A Method for Growing Bio-memristors from Slime Mold
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A Method for Growing Bio-memristors from Slime Mold

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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相关实验视频

Last Updated: May 15, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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科学领域:

  • 材料科学 材料科学 材料科学
  • 计算机工程 计算机工程
  • 信息安全 信息安全

背景情况:

  • 物联网 (IoT) 产生了大量数据,给带宽和安全带来了挑战.
  • 现有的解决方案往往难以平衡压缩效率与强大的信息安全.

研究的目的:

  • 为物联网应用量身定制的数据压缩和加密开发单芯片解决方案.
  • 利用聚胺记忆体的独特特性,提高数据安全性和效率.

主要方法:

  • 使用高斯导电性和随机设置电压分布的聚胺 (PI) 门切换记忆体.
  • 实现压缩传感 (CS) 与数据压缩加密集成.
  • 采用随机电压生成的比特流用于加密文本扩散.

主要成果:

  • 展示了一个单芯片压缩和加密引擎,具有非理想的memristor属性.
  • 通过自发的一次性采样测量矩阵形成,实现绝对安全.
  • 展示了针对窃听的增强安全性,即使是已知的纯文本-加密文本对.
  • 突出优越的压缩性能平衡效率和安全性.
  • 由于PI的热和机械性能,在恶劣环境中得到了证实.

结论:

  • 开发的引擎为高效和安全的物联网数据处理提供了出色的解决方案.
  • 聚胺记忆器为集成的数据压缩和加密提供了一个强大的平台.
  • 这种方法显著提高了数据密集型物联网系统的信息安全.