相关实验视频
Updated: May 15, 2025
07:51
Fabrication of Silica Ultra High Quality Factor Microresonators
Published on: July 2, 2012
16.1K
一百万个质量因素的集成环共振器在中红外线中
Marko Perestjuk1,2, Rémi Armand1, Miguel Gerardo Sandoval Campos1
1Ecole Centrale de Lyon, INSA Lyon, CNRS, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, 69130 Ecully, France.
Nanophotonics (Berlin, Germany)
|April 11, 2025
概括
日耳环共振器在中红外线中达到高达100万的质量因子. 这一突破将德国定位为集成光子学的领先平台,通过共振分裂和光学可见度稳定性来证明这一点.
科学领域:
- 综合光子学 综合光子学
- 中等红外光学中等红外光学
- 材料科学 材料科学 材料科学
背景情况:
- 中红外 (MIR) 集成光子学对于传感和光谱学至关重要.
- 光子平台在MIR中面临限制,原因是的光学损失.
- 在上基 (SiGe) 为MIR应用提供了一个有前途的替代方案.
研究的目的:
- 在SiGe-on-Si平台上演示高质量的因子 (Q-因子) 环共振器.
- 为了使这些共振器在关键的3.5-4.6微米波长范围内工作.
- 通过可观测的光学现象来验证性能.
主要方法:
- 使用先进的光刻和蚀刻技术制造SiGe-on-Si环共振器.
- 在3.5-4.6μm光谱区域的共振器性能的表征.
- 对共振分裂 (退化升降) 和光学可见度稳定性的分析.
主要成果:
- 在SiGe环共振器中实现了超过100万的创纪录的高Q因子.
- 在目标中红外波长中证明了稳定的运行和高性能.
- 通过清楚地观察时针方向 (CW) 和反时针方向 (CCW) 的共振退化升级,确认了高的Q因子.
- 观察到的光学双稳定性,表明在共振器内显著的光学功率积累.
结论:
- SiGe-on-Si平台非常适合用于高性能中红外集成光子学.
- 展示的Q因子与其他先进的光子平台相美.
- 这项工作使SiGe成为未来MIR光子集成电路的领先材料.
相关概念视频
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01:23Parallel Resonance
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