一种测量金属氧化物半导体场效应晶体管接口上自转依赖的捕获事件的技术:接近零场旋转依赖的电荷送
M A Anders1, P M Lenahan2, N J Harmon3
1Alternative Computing Group, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Journal of applied physics
|April 11, 2025
概括
我们介绍了近零场旋转依赖的电荷送 (NZF SDCP),这是研究半导体接口上的旋转依赖捕获的新方法. 这项技术提供了对金属氧化物半导体场效应晶体管 (MOSFET) 缺陷的原子级洞察力.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 量子信息科学 量子信息科学
背景情况:
- 在金属氧化物半导体场效应晶体管 (MOSFET) 通道/门介电接口的缺陷的特征对于设备的性能至关重要.
- 现有的技术,如电磁共振 (EDMR) 提供了宝贵的见解,但可以提高精度.
研究的目的:
- 引入和验证一种新技术,即近零场旋转依赖的电荷送 (NZF SDCP),用于测量旋转依赖的捕获事件.
- 调查接口修改的影响,如引入,在NZFSDCP.
- 探索NZF SDCP在原子尺度缺陷识别和理解磁阻理论方面的潜力.
主要方法:
- 实施NZF SDCP,这是一种基于MOSFET充电和EDMR的技术.
- 在4H-碳化 (4H-SiC) MOSFET上进行测量.
- 执行模型计算以解释观察到的现象.
主要成果:
- 在MOSFET接口上,NZF SDCP有效地测量了自旋依赖的捕获事件.
- 引入会显著改变NZF SDCP反应,表明其对接口成分的敏感性.
- 观察到NZF SDCP振幅和是充电送频率的函数,模型计算提供了解释.
- 随着充电送频率的增加,NZF SDCP频谱扩大,可能会揭示固有的现象.
结论:
- NZF SDCP是一种有前途的技术,用于MOSFET接口的原子尺度表征和缺陷识别.
- 观察到的依赖频率的行为为理解电荷载体动态提供了新的途径.
- NZF SDCP可能提供一种新的实验方法来探索磁阻理论.
相关概念视频
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