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用添加的氧化电子选择性接触器用于水晶太阳能电池,效率超过22.0

Zheng Li¹, Anzhi Xie¹, Qingxian Nong¹

¹School of Materials Shenzhen Campus of Sun Yat-sen University No. 66, Gongchang Road Shenzhen Guangdong 518107 P. R. China.

|April 11, 2025

概括

研究人员开发了一种新的电子选择性被动接触方法,使用上的氧化物 (ZnO:B) 薄膜. 这一进步以低成本的工艺提高了晶 (c-Si) 太阳能电池的效率,超过了22.0%.

科学领域:

材料科学材料科学材料科学
可再生能源可再生能源是可再生能源.
半导体物理半导体物理

背景情况:

传统的化薄膜在提高晶 (c-Si) 太阳能电池效率方面存在局限性.
宽带间隙金属复合薄膜有望改善c-Si表面的被动化和接触性能.

研究的目的:

研究导电性氧化物 (ZnO:B) 薄膜作为电子选择性接触物.
为了评估ZnO:B与二氧化 (SiO2) 的组合,用于c-Si太阳能电池的被动化中间层.
开发一种高效,低成本的电子选择性被动接触c-Si太阳能电池.

主要方法:

原子层沉积 (ALD) 用于沉积 ZnO:B 薄膜.
一种薄薄的SiO2被动化中间层与ZnO:B.的整合.
概念验证的n型c-Si太阳能电池的制造和表征.

主要成果:

在SiO2/ZnO:B堆中达到约2mΩ·cm2的低接触电阻.
证明了表面被动化质量的改善.
在n型c-Si太阳能电池中获得的功率转换效率超过22.0%.

结论:

SiO2/ZnO:B电子选择性被动接触是一种可行的替代传统化Si薄膜.
低温,简化ALD工艺使得高效,经济高效的太阳能电池制造成为可能.
这种方法为开发下一代高效率c-Si太阳能电池提供了有希望的途径.

关键词:

配氧化与相合的氧化.晶体太阳能电池的使用方法电子选择性接触器的接触它们是被动化,被动化.

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