Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

246
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
246
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

250
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
250

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Probing Moiré Excitons in MoSe<sub>2</sub>/WSe<sub>2</sub> Heterobilayers by Combined Micro-photoluminescence and Lateral Force Microscopy.

Nano letters·2026
Same author

Imaging the flat bands of magic-angle graphene reshaped by interactions.

Nature·2026
Same author

Revealing Electron-Electron Interactions in Graphene at Room Temperature with a Quantum Twisting Microscope.

Nano letters·2026
Same author

Optical control over topological Chern number in moiré materials.

Nature·2026
Same author

Observation of a superfluid-to-insulator transition of bilayer excitons.

Nature·2026
Same author

Radio-Frequency Charge Detection on Graphene Electron-Hole Double Quantum Dots.

Nano letters·2025

相关实验视频

Updated: May 14, 2025

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

5.7K

二维异构结构 通过光学写作实现的互补逻辑

Ayaz Ali1,2,3, Matthias Schrade4, Wen Xing4

  • 1Department of Smart Sensor Systems SINTEF DIGITAL Forskningsveien 1 Oslo 0373 Norway.

Small science
|April 11, 2025
PubMed
概括
此摘要是机器生成的。

研究人员开发了一种用于对2D半导体进行调的新方法,使互补晶体管和逻辑电路成为可能. 这种方法使用紫外线和静电激活来实现先进的电子应用.

关键词:
两维材料是二维材料.互补的金属氧化物半导体半导体场效应晶体管 场效应晶体管逻辑逆变器是一个逻辑逆变器.

更多相关视频

Patterning via Optical Saturable Transitions - Fabrication and Characterization
08:19

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Published on: December 11, 2014

6.8K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

相关实验视频

Last Updated: May 14, 2025

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

5.7K
Patterning via Optical Saturable Transitions - Fabrication and Characterization
08:19

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Published on: December 11, 2014

6.8K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

科学领域:

  • 材料科学 材料科学 材料科学
  • 凝聚物质物理学 凝聚物质物理学
  • 纳米技术 纳米技术

背景情况:

  • 二维 (2D) 材料在集成逻辑电路中比具有优势,包括更高的晶体管密度和更低的能量消耗.
  • 在二维半导体中实现可调节的兴奋剂对于开发互补晶体管和复杂的逻辑集成至关重要.
  • 目前用于兴奋剂2D材料的方法在实现精确控制和可扩展性方面面临挑战.

研究的目的:

  • 探索一种在二维半导体中调节性兴奋剂的新方法.
  • 为了证明使用这种兴奋剂方法制造互补晶体管.
  • 实施和测试基于开发的2D半导体晶体管的逻辑逆变器.

主要方法:

  • 选择性地将 tungsten diselenide (WSe2) 转移到六角化 (hBN) 和二氧化 (SiO2) 基板上.
  • 使用紫外线 (UV) 光和静电激活用于光诱导的兴奋剂.
  • 采用先进的特征技术,如高分辨率传输电子显微镜 (HRTEM) 和凯尔文探针力显微镜 (KPFM).

主要成果:

  • 在WSe2中通过选择性紫外线诱导的兴奋剂实现了互补的晶体管行为 (n型和p型).
  • 鉴定证实了紫外线写作后的化学成分和表面电位变化.
  • 通过使用光化WSe2晶体管成功实现了一个功能逻辑逆变器.

结论:

  • 开发的方法可以在二维半导体中实现可调节的染,为先进的逻辑集成铺平了道路.
  • 这种方法为节能和可重新配置的二维半导体电路提供了一条途径.
  • 这些发现解决了使用二维材料开发下一代电子设备的关键挑战.