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Updated: May 14, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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一个修改的模型介电函数用于分析蓝宝石基板上的InGaN纳米膜的光学光谱

Devki N Talwar1,2, Hao-Hsiung Lin3, Jason T Haraldsen1

  • 1Department of Physics, University of North Florida, 1 UNF Drive, Jacksonville, FL 32224-7699, USA.

Nanomaterials (Basel, Switzerland)
|April 11, 2025
PubMed
概括

本研究介绍了一种半实证方法来分析化 (InxGa1-xN) 超薄膜的光学特性. 该方法准确地预测了组合依赖的能量差距,这对于光子设备开发至关重要.

关键词:
在 GaN GaN 中.在InxGa1−xN/蓝宝石薄膜厚度.吸收和传输的频谱.模型介电函数的模型介电函数在InNN的光学常量.反映性的反射性转移矩阵方法转移矩阵方法.

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