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通过ALD沉积的中间层修改的4H-SiC MOS电容器的接口状态密度的减少

Zhenyu Wang^1,2, Zhaopeng Bai^1,2, Yunduo Guo^1,2

¹Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

Nanomaterials (Basel, Switzerland)

|April 11, 2025

概括

这项研究引入了一种新碳化物 (SiC) 门氧化物生长方法,使用氧化 (Al2O3) 消极化层. 这种技术优化了电气性能,并提高了金属氧化物半导体 (MOS) 电容器的偏向应力稳定性.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
电气工程电气工程

背景情况:

碳化 (SiC) 是高功率电子设备的关键材料.
在SiC上获得高质量的氧化物对于设备的性能和可靠性至关重要.
现有的方法在接口质量和稳定性方面面临挑战.

研究的目的:

开发一种创新的方法,在碳化 (SiC) 上种植高质量的氧化物.
为了研究氧化 (Al2O3) 消极化层对SiC MOS电容特性的影响.
为了优化Al2O3层的原子层沉积 (ALD) 周期.

主要方法:

在沉积的Al2O3层上制造SiO2门氧化物,通过在SiC上进行原子层沉积 (ALD).
系统地调查ALD生长周期对接口组成,陷密度和分解的影响.
使用X射线光电子光谱 (XPS) 和电气测量分析MOS电容器的电性能.
在各种温度下评估偏向应力稳定性.

主要成果:

一个具有10个生长周期的ALD Al2O3被动化层有效地抑制了Si-OxCy键.
SiO2 / Al2O3 / SiC门堆实现了最佳的电性能:低接口状态密度 (Dit = 3 × 10^11 cm^-2 eV^-1) 和高断裂场 (Ebd = 10.9 MV / cm).
整合Al2O3层显著增强了偏向应力稳定性,减少了平带和中隙电压转移.

结论:

提出的方法成功地在SiC上制造了高质量的氧化物.
Al2O3被动化层对于提高接口特性和设备可靠性至关重要.
最佳的ALD周期是实现SiC MOS设备优越电性能和稳定的关键.

关键词:

4H-SiC 4H-SiC 是一个在SiC/SiO2接口中.电容电容器电容器电容器电气性能电气性能电气性能

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