铁电道连接点集成在半导体上,具有增强的疲劳阻力
Ningchong Zheng1, Jiayi Li1,2, Haoying Sun1
1National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
与化集成的铁电道结 (FTJ) 与相比,具有优越的抗疲劳能力. 这是由于木铁中的氧气空缺减少,使得更耐用的非挥发性记忆和神经形态设备.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 基于氧化物的铁电道连接 (FTJ) 对非易失性记忆和神经形态计算具有前景.
- 将FTJ与半导体集成是可取的,但受到阻力疲劳问题的阻碍,特别是在基于的系统中.
- 了解半导体集成FTJ中的原子级疲劳机制对于技术进步至关重要.
研究的目的:
- 系统地研究与各种半导体集成的基于超薄 bismuth ferrite (BiFeO3,BFO) 的FTJ的疲劳性能.
- 阐明导致这些设备性能下降的原子级疲劳机制.
- 确定增强半导体集成FTJ疲劳抵抗力的策略.
主要方法:
- 制造基于超薄木铁酸盐 (BFO) 的铁电道结 (FTJ) 与不同的半导体集成,包括和化.
- 通过重复的电气开关周期,系统地调查这些FTJ的疲劳性能.
- 原子尺度分析揭示了潜在的疲劳机制,重点关注结构变化和缺陷积累.
主要成果:
- BFO/化FTJ表现出优越的耐疲劳性 (>10^8周期),显著优于BFO/FTJ (>10^6周期).
- 确定的主要疲劳机制是BFO格子结构的崩,这是由于在重复切换后在半导体接口附近积累氧气空隙造成的.
- 发现化的弱氧亲和力抑制了氧空位的形成,导致在BFO/化FTJ中观察到的增强的疲劳抵抗力.
结论:
- 半导体的选择极大地影响了集成铁电道连接点的耐疲劳性.
- 氧气空缺的积累和随后的晶格崩是BFO型FTJ中疲劳的关键原子尺度机制.
- BFO/化集成为开发用于实际记忆和神经形态应用的高度耐疲劳的氧化物FTJ提供了一个有前途的途径.
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