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Updated: May 13, 2025

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

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发现化对III-化物MOCVD/MOVPE表过程中原子级失位密度的影响

P K Saxena1, P Srivastava2, Anshika Srivastava2

  • 1Tech Next Lab Pvt Ltd, Lucknow, UP, India. praveen@technextlab.com.

Scientific reports
|April 12, 2025
PubMed
概括

在表皮氧化过程中优化氨 (NH3) 预流持续时间,可显著降低化 (AlN) 和化 (GaN) 缓冲层中的缺陷密度. 较长的预流时间最大限度地降低了线程脱位密度 (TDD),改善了III-化物生长的晶体质量.

关键词:
一个AlNN一个AlNN原子主义的原子主义.缺陷 缺陷 缺陷 缺陷在 GaN GaN 中.异种-表皮氧 (hetero-epitaxy) 是一种三,化物 - - 化物模拟模拟是为了模拟.在TNL-EpiGrow中使用.在TNL-TCAD中使用.

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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films13:05

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Trends in Lattice Energy: Ion Size and Charge02:54

Trends in Lattice Energy: Ion Size and Charge

An ionic compound is stable because of the electrostatic attraction between its positive and negative ions. The lattice energy of a compound is a measure of the strength of this attraction. The lattice energy (ΔHlattice) of an ionic compound is defined as the energy required to separate one mole of the solid into its component gaseous ions. For the ionic solid sodium chloride, the lattice energy is the enthalpy change of the process:
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