在Orthorhombic RhSi晶体薄膜中旋转为电荷转换
Surya N Panda1, Qun Yang2, Darius Pohl3
1Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, Dresden 01187, Germany.
ACS applied materials & interfaces
|April 14, 2025
概括
我们在拓式自旋电子学中探索了正方形RhSi结构. 我们的发现显示了高效的旋转电流传输和旋转到充电的转换,突出了其对先进电子设备的潜力.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 拓半金属为新的旋转轨道效应提供了平台.
- 正方体RhSi,一个拓的迪拉克半金属,比它的立方体对应物更少被探索.
- 拓式自旋电子学的进步依赖于对新材料系统的理解.
研究的目的:
- 研究RhSi薄膜的结构性,磁性和电性质.
- 评估RhSi/permalloy接口上的旋转电流传输和旋转电荷转换效率.
- 在旋转轨道扭矩切换应用中探索合式RhSi的潜力.
主要方法:
- 在Si(111) 基板上生长的纹理-表皮状或多体RhSi薄膜.
- 结构性,磁性和电气性质的表征.
- 逆自旋霍尔效应测量以量化自旋电荷转换.
主要成果:
- 通过实验确定了在10K的极旋霍尔电导率为126的最大自旋RhSi.在正弦波RhSi.
- 第一原理计算证实了旋转贝里曲率作为旋转霍尔效应的机制.
- 实现了显著的旋转混合导电性 (34.7 nm-2) 和高的界面旋转透明度 (88%).
结论:
- 正方形RhSi是拓式自旋电子学的一个有前途的材料.
- 该RhSi/铁磁铁异构证明了高效的界面旋转传输和转换.
- 这项工作扩大了拓旋转电子和旋转轨道扭矩装置的应用范围.
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