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Updated: May 13, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Published on: April 12, 2018

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2D半导体GaTe的相调节从六边形到单临床通过层厚控制和应变工程

Wenzhi Quan1,2, Xinyan Wu3, Yujin Cheng2

  • 1Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China.

Nano letters
|April 14, 2025
PubMed
概括

2D Telluride (GaTe) 的相工程是通过控制层厚度和应变来实现的. 这项研究揭示了这些因素如何诱导相位过渡,指导先进应用的未来材料设计.

关键词:
已经获得了.III−VI 半导体 半导体 半导体分子光束的表达式是epitaxy.阶段工程工程的阶段工程.扫描道显微镜/光谱镜

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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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