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通过使用SeS₂前体化学蒸汽沉积生长的轻度Se-Doped单层MoS₂

Ho Min Kang¹, Ji Hwan Kim¹, Abd Ullah²

¹School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea.

ACS applied materials & interfaces

|April 14, 2025

概括

轻微添加的二硫化物 (MoS2) 增强了电子的移动性,并允许在二维半导体中进行带隙调. 这种兴奋剂策略优化了先进电子设备的性能.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

基于过渡金属二甲基化物 (TMDCs) 的二维 (2D) 半导体对于下一代电子非常重要.
关键的挑战包括优化载体的移动性,开/关电流比,值电压和减少歇斯底里.
当前的TMDC材料在性能和可调性方面经常面临先进应用的限制.

研究的目的:

研究轻 (Se) 兴奋剂对单层二硫化物 (MoS2) 的影响.
探索Se doping在增强电子性能和实现带隙调能力方面的潜力.
开发一种方法来定制TMDC属性以提高电子设备的性能.

主要方法:

使用化学蒸汽沉积 (CVD) 合成轻微的Se-doped单层MoS2.
使用二硫化物 (SeS2) 作为兴奋剂的原源.
通过调整在CVD过程中SeS2的温度来控制Se含量.

主要成果:

用5.5%的Se对单层MoS2进行了成功的化,结果是MoS1.89Se0.11.
观察到Se-doped MoS2中的增强电子流动性与未使用的MoS2相比,违背了典型的兴奋剂趋势.
通过通过控制的CVD温度来改变Se含量来证明带隙调性.

结论:

光Se合是一种有效的策略,用于增强单层MoS2.2中的电子流动性.
开发的CVD方法允许精确控制Se内容和带隙调.
这种方法为优化TMDC用于先进的电子和光电子应用提供了可行的途径.

关键词:

带隙化能力带隙化能力石灰的兴奋剂使用.化学蒸气沉积化学蒸气沉积场效应晶体管的领域效应晶体管.过渡金属二甲基二甲基化物

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