强制场控制在轴铁电 Hf0.5 Zr0.5 O2 薄膜通过纳米结构工程
Ji Soo Kim1, Nives Strkalj1, Alexandre Silva2,3
1Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
在氧化 (HZO) 膜的生长过程中降低激光流量,可以减少强制场 (Ec). 这一发现对于开发节能铁电式存储器设备至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体行业 半导体行业 半导体行业
背景情况:
- 铁电氧化物 (HZO) 由于其CMOS兼容性和可扩展性,在半导体行业非常受欢迎.
- 关于铁电相的起源和HZO属性的可调性,仍然存在关键问题.
研究的目的:
- 为了研究激光流动对HZO薄膜强制场 (Ec) 的影响.
- 了解沉积能量与由此产生的微观结构和铁电特性之间的关系.
主要方法:
- 在SrTiO3基板上脉冲激光沉积10纳米厚的 HZO膜.
- 在薄膜生长过程中激光流动的系统变化.
- 微观结构变化的分析和强制场的测量.
- 密度函数理论 (DFT) 计算以支持实验观测.
主要成果:
- 激光流量从1.3 J cm−2降低到0.5 J cm−2使强制场 (Ec) 从3.3~2.7 MV/cm降低.
- 较低的激光流动导致纯 (111) 定向的粒.
- 更高的激光流量导致了额外的 (11-1) 定位,创造了低角度倾斜的粒度边界和位,将域定位.
结论:
- 低能量的生长条件,通过减少激光流动性来实现,对于在HZO薄膜中获得低Ec至关重要.
- 通过控制增长来最大限度地减少域定位点是节能铁电记忆应用的关键.
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