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Updated: May 13, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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顶门式P-MOSFET与CVD培养的WSe2道通过自行对齐的WO转换用于间隔器兴奋剂

Meng-Zhan Li1,2, Terry Y T Hung2, Wei-Sheng Yun2

  • 1Department of Physics, National Taiwan University, Taipei 10617, Taiwan.

Nano letters
|April 15, 2025
PubMed
概括

氧化 (WO) 的转换有效地使得 tungsten diselenide (WSe2) 场效应晶体管 (FET) 变得无效. 这种方法提高了由CVD培养的薄膜制成的设备的电流和移动性,适用于未来的逻辑电路.

关键词:
一个叫做 MOSFET 的设备.这就是WSe2Se2.转换的氧化氧化.低维材料是低维的材料.在p-doping中使用p-doping.自行调整的自我调整.

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