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Updated: May 13, 2025

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量化植入诱导的损伤和点缺陷与多切片电子图形学.

Junghwa Kim1, Colin Gilgenbach1, Aaditya Bhat1

  • 1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, United States.

Nano letters
|April 15, 2025
PubMed
概括

多切片电子图谱量化了碳化 (4H-SiC) 中的离子植入损伤. 损伤比模拟更深,揭示了对于应变测量和设备优化至关重要的空缺.

关键词:
植入损伤 植入损伤离子植入装置 离子植入装置多切片电子图形学 多切片电子图形学点的缺陷点的缺陷碳化物是碳化物中的一种.

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Transmission electron microscopy (TEM) can be used to determine the 3D structure of biological samples with the help of techniques such as electron microscope tomography and single-particle reconstruction. While single-particle reconstruction can examine macromolecules and macromolecular complexes in vitro conditions only, tomography permits the study of cell components or small cells in vivo.
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