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Updated: May 8, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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热载体扩散辅助的理想载体乘法在单层MoSe2中

Joonsoo Kim1, Hong-Guk Min2, Sehwan Park1

  • 1Department of Energy Science, Sungkyunkwan University, South Korea.

Materials horizons
|April 16, 2025
PubMed
概括

单层MoSe2通过最大限度地减少能量损失并使每个光子具有多个电荷载体来实现理想的载体乘积 (CM) 效率. 这一二维材料的突破为光伏提供了一条超越Shockley-Queisser极限的道路.

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相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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