电力运输的蒙特卡罗模拟与焦尔加热和应变在单层MoS设备中
Maritha A Wang1, Eric Pop1,2,3
1Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.
像MoS2这样的二维 (2D) 半导体中的自加热显著提高了晶体管温度,影响了性能. 缓解热量和施加拉伸应变可以在未来的纳米级晶体管中提高电子速度.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术 纳米技术
背景情况:
- 二维 (2D) 半导体对下一代纳米级晶体管具有前景.
- 这些设备的自热效应可能会由于高电流密度和集成而限制性能和可靠性.
研究的目的:
- 为了研究自我加热和应变对单层MoS2.2的电传特性的影响.
- 了解这些因素如何影响2D晶体管中的电子速度和平均自由路径.
主要方法:
- 使用电热蒙特卡洛模拟来建模单层MoS2.2的行为.
- 一个可概括的热电阻模型被纳入,以解释朱尔自热.
主要成果:
- 由于自加热,晶体管温度在高侧电场 (∼5 V/μm) 和载体密度 (∼10^13 cm^-2) 下可以升高超过200 K.
- 电子和速度在自加热时降至2.1 × 10^6 cm/s,但在拉伸应变中减轻时可以达到5.3 × 10^6 cm/s.
- 在高场状态下,电子的平均自由路径被发现是非常短的 (2-3 nm).
结论:
- 自热和施加应变都是必须在新兴2D晶体管的设计和优化中考虑的关键因素.
- 减轻自我加热和利用拉力应变可以显著提高电子传输特性,这对设备性能至关重要.
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