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Updated: May 11, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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高质量的P型接触器,用于具有高工作功能的半金属TiS电极的原子薄MoTe2晶体管

Boyuan Di1,2, Xinlu Li3, Xiaokun Wen1,2

  • 1State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PRC.

ACS applied materials & interfaces
|April 18, 2025
PubMed
概括

高性能p型原子薄晶体管对于未来的电子产品至关重要. 研究人员使用二硫化 (TiS2) 为二化 (MoTe2) 晶体管开发了高质量的接触器,提高了性能.

关键词:
这是一个CMOS系统.在MoTe2晶体管中.P型车型的P型车型TiS2 TiS2 的意思是半金属接触器的接触方式

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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