在一次性全光学开关后,磁域壁的缺陷
Daniel Metternich, Kai Litzius1, Sebastian Wintz2
1Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, 86159 Augsburg, Germany.
Structural dynamics (Melville, N.Y.)
|April 21, 2025
概括
螺旋独立全光学切换 (HI-AOS) 创建具有许多缺陷的磁域墙壁,类似于场循环. 切换后的域壁扩张和高速传播可能会导致缺陷积累,特别是在具有固定点的材料中.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 超快的磁力 超快的磁力
背景情况:
- 螺旋体独立全光学切换 (HI-AOS) 是切换磁顺序的最快方法.
- 在HI-AOS过程中域壁的形成比大面积切换的理解要少.
- 了解域壁动态对于先进的磁性技术至关重要.
研究的目的:
- 研究全光核磁域中域壁的形成和特征.
- 确定影响这些域壁中的缺陷密度的因素.
- 将HI-AOS中的缺陷形成与传统的现场循环方法进行比较.
主要方法:
- 用X射线向量旋转成像可视化域壁和缺陷.
- 时间解析的克尔显微镜观察域扩张动态.
- 微磁模拟用于模拟域壁传播和缺陷积累.
主要成果:
- 在HI-AOS形成的域壁中观察到高密度的垂直布洛赫线缺陷.
- 缺陷密度在很大程度上独立于光脉冲参数,但根据材料而异.
- 域墙在切换后扩张,传播速度高于沃克的分解速度.
- 在HI-AOS和场循环域壁中发现了类似的缺陷密度,这表明了常见的缺陷机制.
结论:
- 域墙的扩张和高速传播 (在沃克破解之上) 有助于在固定站点上积累缺陷.
- 在初始核形成过程中,HI-AOS除了在扩张过程中形成的缺陷外,还会产生缺陷.
- 在超快速切换过程中研究内在域壁动态时,低定位材料是必不可少的.
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