使使GaAs

Hung-Ling Chen1, Thomas Bidaud1, Andrea Scaccabarozzi1,2

  • 1Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay Palaiseau France stephane.collin@cnrs.fr.

Nanoscale advances
|April 21, 2025
PubMed
概括

这项研究探讨了六边形化 (WZ GaAs) 纳米线的特性. 研究人员利用阴极光发射揭示了对WZ GaAs的兴奋剂和重组机制的洞察力,这对未来的半导体应用至关重要.

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