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Updated: May 12, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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光活性缺陷工程和纳米结构功能化MoS2通过光化学芬顿过程

Tuan-Hoang Tran1, Raul D Rodriguez1, Aura Garcia1

  • 1Tomsk Polytechnic University, Lenina Avenue, 30, 634050, Tomsk, Russia. raul@tpu.ru.

Nanoscale
|April 22, 2025
PubMed
概括

一种新的光蚀刻技术将二硫化 (MoS) 转化为具有高缺陷密度的几层材料. 这种绿色方法同时将MoS与磁纳米结构功能化,提高了其催化性能.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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