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Updated: May 16, 2025

Fabrication of Spatially Confined Complex Oxides
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在梯度功能性氧化物异构结构中的电子和磁调节的纳米级工程

Leonard Schüler1, Yannik Sievers1, Vladimir Roddatis2

  • 1I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany. vmosnea@gwdg.de.

Nanoscale
|April 23, 2025
PubMed
概括

氧化物超级格子 (SL) 的接口工程可以控制电子和磁性属性. 一种新的动态生长方法揭示了组成分级 (G) 显著影响低温铁磁性,并驱动绝缘体到金属的过渡.

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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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