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具有4纳米hBN门介电和0.46V门电压的MoS2晶体管

Yaqing Shen¹, Sebastian Pazos¹, Wenwen Zheng¹

¹Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

|April 24, 2025

概括

六角化 (hBN) 显示出作为二硫化 (MoS2) 晶体管的门介电体的希望. 这项研究证明了基于hBN的MoS2场效应晶体管的高性能和可靠性,克服了以前的担忧.

科学领域:

材料科学材料科学材料科学
纳米科学是一个纳米科学.
固态物理固态物理

背景情况:

像MoS2这样的二维 (2D) 半导体是CMOS之外的下一代电子产品的关键.
传统的介电材料与二维材料产生不良接口,导致设备故障.
六角化 (hBN) 提供了一个干净的接口,但具有较低的电容性问题.

研究的目的:

研究hBN作为MoS2晶体管门介电体的可行性.
为了解决关于hBN/MoS2设备中低导电率和门泄漏的担忧.
为了评估 hBN-gated MoS2 晶体管的性能和可靠性.

主要方法:

垂直 Pt/4 nm-hBN/MoS2 晶体管的制造.
晶体管性能的电气特征,包括ON/OFF比率和值电压.
通过重复切换周期来评估设备的可靠性.

主要成果:

实现了高的开/关电流比率,超过105.5.
证明了0.46V的低值电压.
保持低门泄漏电流密度 (J_G) 在10^-4 A/cm^2.2.以下.
在1000个开关周期 (ON/OFF > 10^4,J_G < 10^-4 A/cm^2) 之后显示稳定的性能.

结论:

hBN是MoS2晶体管的可行的门介电体,挑战了以前的假设.
清洁的hBN的范德瓦尔斯接口使得高性能纳米MoS2设备成为可能.
基于hBN的介电材料为可靠的二维电子设备提供了一个有前途的途径.

关键词:

两维材料是二维材料.在CVD中,CVD是非常重要的.EOTOT是什么意思 EOT是什么意思在MoS2的基础上,MoS2 hBNBN 在线阅读晶体管是一个晶体管.

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