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Updated: May 5, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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在沃尔茨III-化物半导体中实验性确定巨型极化

Haotian Ye1, Ping Wang2, Rui Wang1

  • 1State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, 100871, Beijing, China.

Nature communications
|April 24, 2025
PubMed
概括

实验证实了氏体III-化物中的巨型铁电极化,挑战了现有的模型. 一个新的框架重新定义了化物异构结构中的极化,使先进的电子和光子设备成为可能.

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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