MXene

Ju-Hyoung Han1, Jaeeun Park1, Mincheal Kim2

  • 1Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.

概括

新的TixC<0xE1><0xB5><0xA7>Nx<0xE2><0x82><0x93>y<0xE2><0x82><0x93>1T<0xE1><0xB5><0xA3>含的MXene薄膜提供了创纪录的电导率和宽带电磁干扰 (EMI) 屏蔽,推进了高频电子.