相关实验视频

Updated: May 10, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K

缺陷工程Z方案Fe-MOFs/Bi2WO6的异质连接用于太阳能驱动的CO2转换:协同表面催化和界面电荷动力学

Ting Liu1,2,3, Yun Wu1, Hao Wang1,2,3

  • 1Faculty of Chemical Engineering, Kunming University of Science and Technology, Kunming 650500, China.

Nanomaterials (Basel, Switzerland)
|April 25, 2025
PubMed
概括

这项研究开发了一种新的Fe-MOFs/VO-Bi2WO6光催化剂,用于可持续的太阳能驱动的CO2减排. 经过缺陷工程设计的Z模式异构连接显著提高了CO和CH4的产量.

关键词:
转移费用 转移费用 转移费用 转移费用缺陷工程设计的缺陷工程异质连接的异质连接光催化二氧化碳减排的方法表面催化剂的表面催化剂

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Published on: August 28, 2018

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Author Spotlight: Functionalizing Metal-Organic Frameworks: Advancements, Challenges, and the Power of Post-Synthetic Ligand Exchange04:51

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Field Effect Transistor01:29

Field Effect Transistor

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