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Updated: May 10, 2025

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在InP-LiNbO3晶圆级集成平台上的3.584 Tbps连贯接收芯片
Xiaojun Xie1, Chao Wei2, Xingchen He2
1Key Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong University, 611756, Chengdu, China. xxie@swjtu.edu.cn.
Light, science & applications
|April 25, 2025
概括
研究人员开发了一种用于酸 (InP) 和酸 (LiNbO3) 的晶圆级集成平台,使得超高速光二极管和连贯接收器成为可能. 这一突破支持下一代数据中心和先进的光通信系统.
科学领域:
- 光子学和光学工程 光子学和光学工程
- 材料科学 材料科学 材料科学
- 集成电路设计 集成电路设计
背景情况:
- 薄膜酸 (LiNbO3) 对于高性能光子学至关重要,但芯片级集成限制了可扩展性和成本效益.
- 在LiNbO3上集成超高速光二极管和连贯接收器的直接带隙材料仍然是一个重大挑战.
- 现有的平台很难满足高速光学互连和毫米波/THz应用的需求.
研究的目的:
- 开发一个可扩展的,晶圆级异质集成平台,结合化 (InP) 和LiNbO3.
- 为了克服将高速活性元件集成到LiNbO3平台上的制造挑战.
- 为下一代通信系统提供超高速光二极管和先进的光学连贯接收器.
主要方法:
- 开发了InP和LiNbO3.3的晶圆级异质集成过程.
- 使用集成平台制造的超高速光二极管.
- 设计并演示了一种多通道光学连贯接收芯片.
主要成果:
- 实现了带宽为140GHz的超高速光二极管,能够接收100Gbaud的PAM4信号.
- 展示了七通道连贯接收器,总容量为3.584 Tbit/s,具有60 GHz平衡检测带宽和>20 dB CMRR.
- 通过先进的调制格式和低能耗 (低至9.6 fJ/bit) 实现高数据速率 (高达600 Gbit/s/λ).
结论:
- InP-LiNbO3晶圆级集成平台为高性能光子集成电路提供了可扩展的解决方案.
- 这项技术可以实现Pbps超大规模数据中心互连的关键组件.
- 该平台为光学毫米波/THz传感和通信系统的进步铺平了道路.
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